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| AOP611 Complementary Enhancement Mode Field Effect Transistor General Description The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical. Features n-channel VDS (V) = 40V ID = 6.5A (VGS=10V) RDS(ON) < 35m (VGS=10V) < 47m (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 52m (VGS = -10V) < 80m (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D2 D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 S1 PDIP-8 n-channel p-channel Max p-channel -40 20 -5.5 -4.4 -25 2.5 1.6 17 43 -55 to 150 A Units V V Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage 20 Continuous Drain TA=25C 6.5 Current A TA=70C ID 5.3 B Pulsed Drain Current IDM 30 TA=25C TA=70C Power Dissipation Avalanche Current B B Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range PD IAR EAR TJ, TSTG 2.5 1.6 13 25 -55 to 150 W A mJ C Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 37 74 28 35 73 32 Max 50 90 40 50 90 40 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOP611 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=6.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=6.5A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 28.5 40 38.5 18 0.76 1 3.5 506 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 106 38 2.6 8.4 VGS=10V, VDS=20V, ID=6.7A 4.1 1.6 2.6 4.8 VGS=10V, VDS=20V, RL=3, RGEN=3 IF=6.5A, dI/dt=100A/s 2 17 2.1 17.5 11.1 3.9 35 48 47 2.2 Min 40 1 5 1 3 Typ Max Units V A mA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics VGS=3.5V 5 -40C 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=6.5A 1.0E+00 1.0E-01 IS (A) 125C 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics -40C 125C 25C VGS=10V ID=6.5A VGS=4.5V ID=5A 25C 10V 5V 4.5V 15 4V ID(A) 10 125C 20 VDS=5V 50 VGS=4.5V RDS(ON) (m) 40 30 VGS=10V 20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 70 60 50 RDS(ON) (m) 25C Alpha & Omega Semiconductor, Ltd. AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 6.5A Capacitance (pF) 800 600 Ciss 400 Coss 200 Crss 0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10s 10.00 ID (Amps) RDS(ON) limited DC TJ(Max)=150C TA=25C 0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 100s Power (W) 1ms 1.00 10ms 0.1s 1s 10s 40 TJ(Max)=150C TA=25C 30 20 0.10 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AOP611 P-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-5.5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-4.4A Forward Transconductance VDS=-5V, ID=-5.5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -25 43 60 65 11 -0.76 -1 -3.5 1006 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 152 77 11 17.4 VGS=-10V, VDS=-20V, ID=-5.5A 8.8 3.3 4.5 9.7 VGS=-10V, VDS=-20V, RL=3.6, RGEN=3 IF=-5.5A, dI/dt=100A/s 2 Min -40 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 150 -2 -3 52 72 80 A A V A m m S V A pF pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 16.5 nC nC nC nC ns ns ns ns ns nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 6.3 35.5 26 22 15.9 Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics -3.5V VGS=-3V -ID(A) -4V 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance VGS=-4.5V 1.6 1.4 1.2 1 0.8 0.6 30 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 70 60 25C 50 1.0E-05 40 2 3 4 5 6 7 8 9 10 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -40C ID=-5.5A 125C -IS (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 125C -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-4.4A VGS=-10V ID=-5.5A -10V -6V -5V -4.5V 25 VDS=-5V 20 25C 125C -40C 80 70 RDS(ON) (m) 60 50 40 VGS=-10V Alpha & Omega Semiconductor, Ltd. RDS(ON) (m) AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-30V ID=-5.5A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 100.00 10s 10.00 ID (Amps) RDS(ON) limited TJ(Max)=150C TA=25C DC 100s 10ms 1ms 0.1s 0.10 1s 10s Power (W) 40 TJ(Max)=150C TA=25C 30 1.00 20 10 0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 Alpha & Omega Semiconductor, Ltd. |
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